2018

Publication list (2005)

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2006

2005

1. Wing-tilt-free gallium nitride laterally grown on maskless chemical etched sapphire-patterned substrate, by Jing Wang, L.W.Guo, H.Q.Jia, Z.G.Xing, Y.Wang. H.Chen and J.M.Zhou, J. Vac. Sci. Technol. B23, 2476 (2005)                                    

2. Qin Qi,GuoLi-Wei,Zhou Zhong-Tang, Chen Hong, Du Xiao-Long, Mei Zeng-Xia, Jia Jin-Feng, Xue Qi-Kun and Zhou Jun-Ming Electroluminescence of an n-ZnO/p-GaN Heterojunction under Forward and Reverse Biases Chinese Phys. Lett. 22，2298 (2005)            

3. Wang J, Guo LW, Jia HQ, Z.G.Xing, Y.Wang. H.Chen and J.M.Zhou, Origin of selective growth of GaN on maskless V-grooved sapphire substrates by metalorganic chemical vapor deposition JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 44 (28-32): L982-L984 2005          

4. Li ZH, Guo LW, Wu SD, et al. Interface properties of InAs/AlSb superlattices characterized by grazing incidence x-ray reflectivity CHINESE PHYSICS LETTERS 22 (7): 1729-1731 JUL 2005                                       

5. Wu SD, Wang WX, Guo LW, et al. Optical properties of AlAs/GaAs quantum wells with antimony as a surfactant by solid source molecular beam epitaxy JOURNAL OF CRYSTAL GROWTH 278 (1-4): 548-552 MAY 1 2005

6. Wu SD, Guo LW, Li ZH, et al. Effect of the low-temperature buffer thickness on quality of InSb grown on GaAs substrate by molecular beam epitaxy JOURNAL OF CRYSTAL GROWTH 277 (1-4): 21-25 APR 15 2005

7. Wu SD, Guo LW, Wang WX, et al. Incorporation behaviour of arsenic and phosphorus in GaAsP/GaAs grown by solid source molecular beam epitaxy with a GaP decomposition source CHINESE PHYSICS LETTERS 22 (4): 960-962 APR 2005

8. 秦琦，于乃森，郭丽伟，汪洋，朱学亮，陈弘，周均铭，使用SiNx原位淀积方法生长的GaN外延膜中的应力研究，物理学报，54，5450 （2005）

9. M.J.Ying, X.L.Du, Y.Z.Liu, Z.T.Zhou, Z.Q.Zeng, Z.X.Mei, J.F.Jia, H.Chen and Q.K.Xue, Interface engineering for lattice-matched epitaxy of ZnO on (La,Sr)(Al,Ta)O3(111) substrate, Appl.Phys.Lett, 87, 202107 (2005)