2018

Publication list (2006)

2017

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2015

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2012

2011

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2006

2005

1. Yu N S , Guo L W , Chen H , Xing Z G , Wang J , Zhu X L , Peng M Z , Yan J F , Jia H Q , Zhou J M
   Luminescent characteristics of near ultraviolet InGaN/GaN MQWs grown on grooved sapphire substrates fabricated by wet chemical etching
   CHINESE PHYSICS LETTERS, 23 (8): 2243-2246 AUG 2006

2. X Z Shang ,S D Wu ,C Liu ,W X Wang ,L W Guo ,Q huang and J M Zhou
   Low temperature step-graded InAlAs/GaAs metamorphic buner layers grown by molecular beam epitaxy
   JOURNAL OF PHYSICS D-APPLIED PHYSICS, 39 (9): 1800-1804 MAY 7 2006

3. X.Z.Shang , P.J. Niu , B.N. Mao , W.X. Wang , L.W. Guo , Q. Huang , J.M. Zhou InGaP/GaAs heterojunction bipolar transistor grown by solid-source molecular beam epitaxy with a GaP decomposition source
   SOLID STATE COMMUNICATIONS, 138 (3): 114-117 2006

4. Jing Wang, L.W. Guo, H.Q. Jia, Z.G. Xing, Y. Wang, J.F. Yan,N.S. Yu, H. Chen, J.M. Zhou
   Investigation of characteristics of laterally overgrown GaN on striped sapphire substrates patterned by wet chemical etching
   JOURNAL OF CRYSTAL GROWTH, 290 (2): 398-404 MAY 1 2006

5. Jing Wang, L. W. Guo, H. Q. Jia, Y. Wang, Z. G. Xing, W. Li, H. Chen, and J. M. Zhou
   Fabrication of patterned sapphire substrate by wet chemical etching for maskless lateral overgrowth of GaN
   JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 153 (3): C182-C185 2006

6. Jing Wang, L.W. Guo, H.Q. Jia, Z.G. Xing, Y. Wang, H. Chen and J.M. Zhou
   Lateral epitaxial overgrowth of GaN films on patterned sapphire substrates fabricated by wet chemical etching, Thin Solid Films, Volume 515, Issue 4, Pages 1727-1730, 2006,

7. Zhen HL, Li N, Jiang J, Xu WL, Lu W, Huang Q, Zhou JM.
   Study on substrate-lifted-off quantum well infrared photodetector
   JOURNAL OF INFRARED AND MILLIMETER WAVES 25 (3): 161-164 JUN 2006

8. Zhang J, Cheng XK, Zhou JM, Huang Q
   The wavelength of the responsive peak resulted from electron interferences for multi-quantum well infrared detectors
   PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 33 (1): 211-215 JUN 2006

9. 彭铭曾，张洁，朱学亮，郭丽伟，贾海强，陈弘，周均铭， n型AlGaN材料的电学和光学性质，激光与红外，36（11），1057（2006）

10. Characteristics of High In-content InGaN Alloys Grown by MOCVD
    Zhu Xue-Liang, Guo Li-Wei, Jia Hai-Qiang, Yu Nai-Sen, Yan Jian-Feng, Peng Ming-Zeng, Chen Hong and Zhou Jun-Ming, Chin. phys. Lett. 23(12)2006, 3369