2018

Publication list (2007)

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2015

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2012

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2007

2006

2005

1. Y. Wang, X. J. Pei, Z. G. Xing, L. W. Guo, H. Q. Jia, H. Chen, and J. M. Zhou， Anomalous tunneling effect on photoluminescence of asymmetric coupled double InGaN/GaN quantum wells, Appl. Phys. Lett. 91, 061902 (2007)

2. X. H. Wang, H. Q. Jia, L. W. Guo, Z. G. Xing, Y. Wang, X. J. Pei, J. M. Zhou, H. Chen，White light-emitting diodes based on a single InGaN emission layer， Appl. Phys. Lett. 91,161912 (2007)

3. X. L. Zhu, L. W. Guo, B. H. Ge, H.Q.Jia, H.Chen and J.M.Zhou, Phase segregation of metallic indium cluster in thick InGaN film grown by metalorganic chemical vapor deposition, Appl. Phys. Lett. 91, 172110 (2007)

4. J.F. Yan_, L.W. Guo, J. Zhang, X.L. Zhu, G.J. Ding, Z.G. Xing, Z.T. Zhou, X.J. Pei, Y. Wang, H.Q. Jia, H. Chen, J.M. Zhou, Characteristics of the improved a-plane GaN films grown on r-plane sapphire with two-step AlN buffer layer, Journal of Crystal Growth 307, 35 (2007)

5. M.Z. Peng_, L.W. Guo, J. Zhang, N.S. Yu, X.L. Zhu, J.F. Yan, Y. Wang, H.Q. Jia, H. Chen, J.M. Zhou, Effect of growth temperature of initial AlN buffer on the structural and optical properties of Al-rich AlGaN, Journal of Crystal Growth 307, 35 (2007)

6. Yan JF, Xing ZG, Wang J, Guo LW, Zhu XL, MZ Peng, NS Yu, HQ Jia, Chen H, Zhou JM, Elimination of crystallographic wing tilt of canti-bridged epitaxial laterally overgrown GaN films by optimizing growth procedure, CHINESE PHYSICS LETTERS 24 (7), 2018-2021 (2007)

7. Zhou ZT, Guo LW, Xing ZG, Ding GJ, Zhang J, Peng MZ, Jia HQ, Chen H, Zhou JM, Growth of semi-insulating GaN by using two-step AlN buffer layer, CHINESE PHYSICS LETTERS 24 (6): 1641-1644 (2007)

8. Zhou ZT, Xing ZG, Guo LW, Chen H, Zhou JM, Growth of semi-insulating GaN using N-2 as nucleation layer carrier gas combining with an optimized annealing time, CHINESE PHYSICS LETTERS 24 (6): 1645-1648 (2007)

9. Zhou ZT, Guo LW, Xing ZG, Ding GJ, Tan CL, Lu L (Lu Li), Liu J, Liu XY, Jia HQ, Chen H, Zhou JM, The transport property of two dimensional electron gas in AlGaN/AIN/GaN structure , ACTA PHYSICA SINICA 56 (10): 6013-6018 OCT 2007

10. Wang Y, Pei XJ , Xing ZG, Guo LW, Jia HQ, Chen H, Zhou JM, Investigation on photoluminescence blue shift of InGaN/GaN quantum wells induced by surface band bending, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1, 46 (7A): 4079-4084 JUL 2007

11. Yu NS, Guo LW, Tang LH, Zhu XL, Wang J, Peng MZ, Yan JF, Jia HQ , Chen H, Zhou JM, The origin of wing tilt for uncoalesced GaN grown on maskless grooved sapphire fabricated by wet chemical etching, MATERIALS RESEARCH BULLETIN 42 (9): 1589-1593 SEP 4 2007

12. Wang Y, Pei XJ, Xing ZG, L. W. Guo, H. Q. Jia, H. Chen, and J. M. Zhou. Effects of barrier growth temperature ramp-up time on the photoluminescence of InGaN/GaN quantum wells, JOURNAL OF APPLIED PHYSICS 101 (3): Art. No. 033509 FEB 1 2007

13. Yu NS, Guo LW, Chen H, Z.G. Xing, B.H. Ge, J. Wang, X.L. Zhu, M.Z. Peng, J.F. Yan, H.Q. Jia, J.M. Zhou, Near ultraviolet InGaN/GaN MQWs grown on maskless periodically grooved sapphire substrates fabricated by wet chemical etching, JOURNAL OF ALLOYS AND COMPOUNDS 428 (1-2): 312-315 JAN 31 2007

14. Zhigang Xing, J. Wang, Y. Wang, X. H. Wang, Z. T. Zhou, H. Chen, and J. M. Zhou, Crystallographic wing tilt and thermal-stress distribution of GaN laterally overgrown on maskless V-grooved sapphire substrateby metal-organic chemical vapor deposition, J. Vac. Sci. & Tech. B,25, 697 (2007)

15. Zhigang Xing, J. Wang, XJ Pei, W Wan, H. Chen, and J. M. Zhou, Dislocation reduction mechanisms in gallium Nitride films grown by Canti-Bridge Epitaxy method, CHINESE PHYSICS LETTERS 24 (8): 2353 (2007)

16. X. L.Zhu, L.W.Guo N. S.Yu, J.F.Yan, M.Z.Peng, H.Q.Jia, H.Chen J.M.Zhou, Struutural characterization of InN films grown on different buffer layers by metalorganic chemical vapor deposition, Journal of Crystal Growth 306, 292 (2007)

17. Liu LS, Wang WX, Li ZH, B.L. Liu, H.M. Zhao, J. Wang, H.C. Gao, Z.W. Jiang, S. Liu, H. Chen, J.M. Zhou, Influence of interface interruption on spin relaxation in GaAs (110) quantum wells, JOURNAL OF CRYSTAL GROWTH 301: 93-96 (2007)

18. 刘林生,刘肃,王文新,赵宏鸣,刘宝利, 蒋中伟,高汉超,王佳,黄庆安, 陈弘, 周均铭, 关于RHEED振荡技术优化GaAs(110)量子阱生长的研究(Optimization of GaAs (110) quantum well material growth technology by reflection high energy electron diffraction), ACTA PHYSICA SINICA 56 (6): 3355-3359 (2007)

19. Li ZH, Wang WX, Liu LS, HC Gao, ZW Jiang, JM Zhou, H Chen, Buffer influence on AlSb/InAs/AlSb quantum wells, JOURNAL OF CRYSTAL GROWTH 301: 181-184 (2007)

20. Hanchao Gao, Wenxin Wang_, Zhongwei Jiang, Linsheng Liu, Junming Zhou, Hong Chen, The growth parameter influence on the crystal quality of InAsSb grown on GaAs by molecular beam epitaxy, JOURNAL OF CRYSTAL GROWTH 308,406 (2007)

21. C.H. Zhang, Y. Song, Y.M. Sun, H. Chen, Y.T. Yang, L.H. Zhou, Y.F. Jin, Damage accumulation in gallium nitride irradiated with various energetic heavy ions, Nuclear Instruments and Methods in Physics Research B 256, 199–206 (2007)

22. 张洁， 彭铭曾，朱学亮，颜建锋，郭丽伟，贾海强，陈弘，周均铭，AlN外延薄膜的生长和特征， 激光与红外 37，974 （2007）

23. Yibo Han, Si Xiao, Hongming Zhao Hanchao Gao, G. G. Xiong and Q. Q. Wang, Imaging spatial distributions of laser-induced charge and spin in GaAs/AlGaAs two-dimensional electron gas by pump-probe second harmonic generation, Appl. Phys. Lett. 91,202114 (2007)

24. Hongming Zhao, Baoli Liu, Liwei Guo, Changling Tan, Hong Chen, and Dongmin Chen, Experimental observation of isotropic in-plane spin splitting in GaN/AlGaN two-dimensional electron gas, Appl. Phys. Lett., 91, 252105 (2007)

25. Liang Chen, Jun Chen, Yun Bai, Liwei Guo, Yan Zhang, Xiangyang Li, and Haimei Gong, Back-illuminated GaN/AlGaN visible-blind photodiodes, Proc. SPIE 6724, 67240I (2007)