清洁能源实验室

新型化合物半导体材料与器件研究组 (E03)

2018

Publication list (2008)

2017

2016

2015

2014

2013

2012

2011

2010

2008

2009

2007

2006

2005

  1. X. L. Zhu, L. W. Guo, M. Z. Peng, B. H. Ge, J. Zhang, G. J. Ding, H.Q. Jia, H. Chen and J. M.Zhou, Characterization of a-plane InN film grown on r-plane sapphire by MOCVD, Journal of Crystal Growth 310,3726 (2008)

  2. PENG Ming-Zeng, GUO Li-Wei, ZHANG Jie, YU Nai-Sen,ZHU Xue-Liang, YAN Jian-Feng, GE Bin-Hui, JIA Hai-Qiang, CHEN Hong,ZHOU Jun-Ming,Three-Step Growth Optimization of AlN Epilayers by MOCVD,CHIN.PHYS.LETT.25, 2265 (2008)

  3. M.Z. Peng, L.W. Guo, J. Zhang, X.L. Zhu, N.S. Yu, J.F. Yan, H.H. Liu,H.Q. Jia, H. Chen, J.M. Zhou, Reducing dislocations of Al-rich AlGaN by combining AlN buffer and AlN/Al0.8Ga0.2N superlattices, Journal of Crystal Growth 310, 1088–1092 (2008)

  4. PEI Xiao-Jiang, GUO Li-Wei, WANG Yang, WANG Xiao-Hui, JIA Hai-Qiang, CHEN Hong, ZHOU Jun-Ming, WANG Li, Tamai N, Reversible Carriers Tunnelling in Asymmetric Coupled InGaN/GaN Quantum Wells, CHIN.PHYS.LETT.25, 3470 (2008)

  5. Zhongwei Jiang, Wenxin Wang, Hanchao Gao, Linshen Liu, Hong Chen, Junming Zhou, Strain relaxation and surface morphology of high indium content InAlAs metamorphic buffers with reverse step, Applied Surface Science 254, 5241 (2008)

  6. JIANG Zhong-Wei, WANG Wen-Xin, GAO Han-Chao, LI Hui, YANG Cheng-Liang, HE Tao, WU Dian-Zhong, CHEN Hong, ZHOU Jun-Ming, Effect of GaAs/GaSb Combination Strain-Reducing Layer on Self-Assembled InAs Quantum Dots, CHIN. PHYS.LETT.25, 2649 (2008)

  7. ZHANG Jie, GUO Li-Wei, XING Zhi-Gang, GE Bing-Hui, DING Guo-Jian, PENG Ming-Zeng, JIA Hai-Qiang, ZHOU Jun-Ming, CHEN Hong, Growth of Highly Conductive n-Type Al0.7 Ga0.3N Film by Using AlN Buffer with Periodical Variation of V/III Ratio, CHIN.PHYS.LETT. Vol. 25, 4449 (2008)

  8. GAO Han-Chao, WANG Wen-Xin, JIANG Zhong-Wei, LIU Jian,YANG Cheng-Liang, WU Dian-Zhong, ZHOU Jun-Ming, CHEN Hong,Growth, Antimony Incorporation Behaviour and Beryllium Doping of GaAsSb Grown on GaAs by Molecular Beam Epitaxy,CHIN. PHYS. LETT. Vol. 25, No. 12 (2008) 4466

  9. Wangping Wang, Ying Hou, Dayuan Xiong, Ning Li, and Wei Lu, Wenxing Wang, Hong Chen, and Junming Zhou, E. Wu and Heping Zeng, High photoexcited carrier multiplication by charged InAs dots in AlAs/GaAs/AlAs resonant tunneling diode, APPLIED PHYSICS LETTERS 92, 023508 (2008)

欢迎同学报考E03组攻读博士学位!!!
主页
仪器设备
组内成员
研究方向
主页
论文专利
组内新闻
文化生活
联系我们

Copyright@2018 清洁能源实验室E03组