2018

Publication list (2009)

2017

2016

2015

2014

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2012

2011

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2008

2009

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2006

2005

1. Jia H Q, Guo L W, Wang W X, et al. Recent Progress in GaN‐Based Light‐Emitting Diodes[J]. Advanced Materials, 2009, 21(45):4641-4646.

2. Wang W P, Hou Y, Li N, et al. Field effect enhanced quantum dot resonant tunneling diode for high dynamic range light detection[J]. Applied Physics Letters, 2009, 94(9):405.

3. Wang X H, Guo L W, Jia H Q, et al. Control performance of a single-chip white light emitting diode by adjusting strain in InGaN underlying layer[J]. Applied Physics Letters, 2009, 94(11):4056.

4. 蒋中伟, 王文新, 高汉超,等. GaSb/GaAs复合应力缓冲层上自组装InAs量子点的生长[J]. 物理学报, 2009, 58(1):471-476.

5. 裴晓将, 郭丽伟, 王晓晖, et al. Enhanced Photoluminescence of InGaN/GaN Green Light-Emitting Diodes Grown on Patterned Sapphire Substrate[J]. Chinese Physics Letters, 2009, 26(2):028101.

6. 张洁, 郭丽伟, 陈耀, et al. Growth and Characteristics of Epitaxial AlxGa1-xN by MOCVD1[J]. 中国物理快报:英文版, 2009(6):279-282.

7. Peng M, Guo L, Zhang J, et al. Characterisfics of silent B-1(H) mode in AlxGa1-xN alloys observed by Raman scattering[J]. Journal of Alloys & Compounds, 2009, 473(1–2):473-476.