清洁能源实验室

新型化合物半导体材料与器件研究组 (E03)

2022

Publication list (2022)

2021

2020

2019

2018

2013~

2005

  1. Su, Zhaole, et al. "Role of low temperature Al (Ga) N interlayers on the polarity and quality control of GaN epitaxy." Journal of Crystal Growth 598 (2022): 126867.
  2. Song, Yimeng, et al. "Two-step deposition of an ultrathin GaN film on a monolayer MoS2 template." ACS Applied Materials & Interfaces 14.14 (2022): 16866-16875.
  3. Hu, xiaotao, et al. "Characterization of the N-polar GaN film grown on C-plane sapphire and misoriented C-plane sapphire substrates by MOCVD." Chinese Physics B 31.3 (2022): 038103.
  4. Su, Zhaole, et al. "Effect of initial condition on the quality of GaN film and AlGaN/GaN heterojunction grown on flat sapphire substrate with ex-situ sputtered AlN by MOCVD." Vacuum 201 (2022): 111063.
  5. Li, xinxin, et al. "Demonstration of SWIR silicon-based photodetection by using Thin ITO/Au/Au nanoparticles/n-Si structure." Sensors 22.12 (2022): 4536.
  6. Li, Xuanzhang, et al. "High performance visible-SWIR flexible photodetector based on large-area InGaAs/InP PIN structure." Scientific Reports 12.1 (2022): 7681.
  7. Junyang Zhang, Zhendong Gao, Miao Wang, Guojian Ding, Chunhua Du, Yang Jiang, Haiqiang Jia, Wenxin Wang, Hong Chen, and Zhen Deng, "Opto-electrical and polarization performance of a mesa-structured InGaAs PIN detector integrated with subwavelength aluminum gratings," Opt. Lett. 47, 6173-6176 (2022)
  8. Su, Zhaole, et al. "N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation." Materials 15.9 (2022): 3005.
  9. Zhang, Junyang, et al. "Experimental Demonstration of the Impact of the Parameters of Floating Guard Ring on Planar InP/InGaAs-Based Avalanche Photodiodes’ Performance and Its Optimization." IEEE Photonics Journal 14.2 (2022): 1-6.
  10. Hu, xiaotao, et al. "Characterization of the N-polar GaN film grown on C-plane sapphire and misoriented C-plane sapphire substrates by MOCVD." Chinese Physics B 31.3 (2022): 038103.
欢迎同学报考E03组攻读博士学位!!!
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