清洁能源重点实验室

E03组--新型化合物半导体外延材料及其物性研究

欢迎同学报考E03组攻读博士学位！！！
—— 2025 ——
  1. Huang, Y., et al. "Direct epitaxy of high-quality a-plane GaN on r-plane sapphire substrate using patterned SiO₂ mask." Journal of Alloys and Compounds 183071 (2025).
  2. Li, Y., et al. "Abnormal photoluminescence behaviors of Indium Gallium Nitride quantum dots." Journal of Alloys and Compounds 182777 (2025).
  3. Liu, Y., et al. "Effects of MOCVD growth conditions on N-polar GaN layers on misorientation sapphires." Vacuum 238, 114294 (2025).
  4. Yue, Jiaxin, et al. "Enhancing mid-wavelength InAs/GaSb type II superlattice infrared detector with monolithically integrated metalens." Optics Express 33 (15), 30948-30956 (2025).
  5. Han, J., et al. "Improving the performance of high-efficiency silicon heterojunction solar cells through the synergism of composite passivation with energy-band engineering." Japanese Journal of Applied Physics 64 (4), 041002 (2025).
  6. Wang, F., et al. "Optimizing Forward Drop and Reverse Leakage Trade‐Off in AlGaN/GaN Lateral Diode with Schottky‐Metal‐Insulator‐Semiconductor Cascode Anode." physica status solidi (a) 222 (3), 2400338 (2025).
  7. Wang, F., et al. "Achieving ultralow leakage current in Schottky-MIS cascode anode lateral field-effect diode based on AlGaN/GaN HEMT." Science China Information Sciences 68 (1), 112403 (2025).
  8. Wang, Z., et al. "First Experimental Demonstration of TiN x O y Resistive Field Plate on p-GaN HEMTs With Simultaneously Enhanced BV and R on." IEEE Transactions on Electron Devices (2025).
  9. Wang, F., et al. "Schottky-MIS Cascode Drain Reverse-Blocking p-GaN Gate Transistor With Significantly Reduced Forward Drop and Ultralow Leakage Current." IEEE Electron Device Letters (2024).
  10. Wang, Zelong, et al. "High pressure synthesis, crystal structure and electronic properties of Ba3Hf (Se1-xTex) 5 (x= 0-1)." Chinese Physics B (2025).
—— 2024 ——
  1. Su, Z., et al. "Relation of V/III ratio of AlN interlayer with the polarity of nitride." Chinese Physics B 33 (11), 117801 (2024).
  2. Long Meng, F., et al. "Design of a polarization-insensitive broadband achromatic metalens for mid-wave infrared detector." Optics Letters 49 (19), 5563-5566 (2024).
  3. Li, X., et al. "Quantum confinement of carriers in the type-I quantum wells structure." Chinese Physics B 33 (9), 097301 (2024).
  4. Li, Yangfeng, et al. "Effects of TMAl predose time on the quality of submicron-thick GaN on Si." Vacuum 226, 113328 (2024).
  5. Li, Xinxin, et al. "Reanalysis of energy band structure in the type-II quantum wells." Chinese Physics B 33 (6), 067302 (2024).
  6. Wang, Fangzhou, et al. "Analytically modeling the effect of buffer charge on the 2DEG density in AlGaN/GaN HEMT." IEEE Transactions on Electron Devices 71 (3), 1654-1661 (2023).
  7. Chen, W., et al. "Effect of Cascade Current Density and Plating Time on TSV Filling Effect in DC Power Supply." In 2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), 1-3. IEEE (2024).
  8. Xu, Xiaorui, Yicong Deng, Titao Li, Duanyang Chen, Fangzhou Wang, Cheng Yu, Hongji Qi, Yang Wang, Haizhong Zhang, and Xiaoqiang Lu. "Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination." Applied Physics Letters 125, no. 2 (2024).
  9. Wang, Fangzhou, et al. "Achieving ultralow leakage current in Schottky-MIS cascode anode lateral field-effect diode based on AlGaN/GaN HEMT." Science China Information Sciences 68 (1), 112403 (2025).
—— 2023 ——
  1. Yu, Luming, et al. "Improving performances of ultra-small size (1–20 μm) InGaN red micro-LEDs by growing on freestanding GaN substrates." Applied Physics Letters 123 (23) (2023).
  2. Guojian, D., et al. "Design of high-efficiency lithium niobate thin film waveguide mode size converter." Infrared and Laser Engineering 52 (9), 20220897-1 (2023).
  3. Hao, Bin, et al. "Comparing single-, double-and triple-layer anti-reflection coatings for ultra-low reflectance in silicon heterojunction solar cells." Japanese Journal of Applied Physics 62 (6), 061002 (2023).
  4. Li, Yangfeng, et al. "In situ AlGaN interlayer for reducing the reverse leakage current of InGaN light-emitting diodes." IEEE Electron Device Letters 44 (5), 777-780 (2023).
  5. Zhang, Yujian, et al. "Normally-Off p-GaN Gate High-Electron-Mobility Transistors with the Air-Bridge Source-Connection Fabricated Using the Direct Laser Writing Grayscale Photolithography Technology." Crystals 13 (5), 815 (2023).
  6. Tian, Feng, et al. "Polarization modulation on charge transfer and band structures of GaN/MoS2 polar heterojunctions." Crystals 13 (4), 563 (2023).
  7. He, J., et al. "Charge compensation impact on the access region resistance in AlGaN/GaN devices." Micro and Nanostructures 176, 207497 (2023).
—— 2022 ——
  1. Su, Zhaole, et al. "Role of low temperature Al (Ga) N interlayers on the polarity and quality control of GaN epitaxy." Journal of Crystal Growth 598 (2022): 126867.
  2. Song, Yimeng, et al. "Two-step deposition of an ultrathin GaN film on a monolayer MoS2 template." ACS Applied Materials & Interfaces 14.14 (2022): 16866-16875.
  3. Hu, xiaotao, et al. "Characterization of the N-polar GaN film grown on C-plane sapphire and misoriented C-plane sapphire substrates by MOCVD." Chinese Physics B 31.3 (2022): 038103.
  4. Su, Zhaole, et al. "Effect of initial condition on the quality of GaN film and AlGaN/GaN heterojunction grown on flat sapphire substrate with ex-situ sputtered AlN by MOCVD." Vacuum 201 (2022): 111063.
  5. Li, xinxin, et al. "Demonstration of SWIR silicon-based photodetection by using Thin ITO/Au/Au nanoparticles/n-Si structure." Sensors 22.12 (2022): 4536.
  6. Li, Xuanzhang, et al. "High performance visible-SWIR flexible photodetector based on large-area InGaAs/InP PIN structure." Scientific Reports 12.1 (2022): 7681.
  7. Junyang Zhang, Zhendong Gao, Miao Wang, Guojian Ding, Chunhua Du, Yang Jiang, Haiqiang Jia, Wenxin Wang, Hong Chen, and Zhen Deng, "Opto-electrical and polarization performance of a mesa-structured InGaAs PIN detector integrated with subwavelength aluminum gratings," Opt. Lett. 47, 6173-6176 (2022)
  8. Su, Zhaole, et al. "N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation." Materials 15.9 (2022): 3005.
  9. Zhang, Junyang, et al. "Experimental Demonstration of the Impact of the Parameters of Floating Guard Ring on Planar InP/InGaAs-Based Avalanche Photodiodes’ Performance and Its Optimization." IEEE Photonics Journal 14.2 (2022): 1-6.
  10. Hu, xiaotao, et al. "Characterization of the N-polar GaN film grown on C-plane sapphire and misoriented C-plane sapphire substrates by MOCVD." Chinese Physics B 31.3 (2022): 038103.
—— 2021 ——
  1. Tang, Xiansheng , et al. "Stripping GaN/InGaN epitaxial films and fabricating vertical GaN-based light-emitting diodes." Vacuum 187.18(2021):110160.
  2. B, Yangfeng Li A , et al. "Epitaxy N-polar GaN on vicinal Sapphire substrate by MOCVD." Vacuum 189.
  3. Envelope, Wenqi Wang A B Person , et al. "Dark current investigation in individual planar In 0.53 Ga 0.47 As/InP detector and fine pixel-pitch array with spacing variations." Results in Optics 5(2021).
  4. C, Xiansheng Tang A B , et al. "Enhancement of light extraction efficiency of AlGaInP-based light emitting diodes by silicon oxide hemisphere array - ScienceDirect." Optics Communications 481.
  5. Tang, Xiansheng , et al. "Enhanced light extraction from AlGaInP-based red light-emitting diode with photonic crystal." Optics Express (2021).
  6. Han, Lili , et al. "Effect of Pt Interlayer on Low Resistivity Ohmic Contact to p-InP Layer and Its Optimization." 中国物理快报:英文版 (2021).
  7. Li, Xinxin , et al. "Sphere-shaped SiGe micro/nanostructures with tunable Ge composition and size formed by laser irradiation." Chinese Physics B 30.9(2021).
  8. Wang, Wenqi , et al. "Influence of Sb 2 soaking on strained InAs 0.8 Sb 0.2 /Al 0.2 Ga 0.8 Sb multiple quantum well interfaces." AIP Advances 11.7(2021):075004.
  9. Tang, Xiansheng , et al. "Origin of anomalous enhancement of the absorption coefficient in a PN junction." Chinese Physics B (2021).
  10. Chen Yue et al. “Enhanced absorption process in the thin active region of GaAs based p–i–n structure”. Chin. Phys. B Vol. 30, No. 9 (2021) 097803
—— 2020 ——
  1. Tang, Xiansheng , et al. "Research on photo-generated carriers escape in PIN and NIN structures with quantum wells." Applied Physics Express 13.7(2020):071009 (4pp).
  2. Wang Y, Duan L, Deng Z, Liao J. Electrically Transduced Gas Sensors Based on Semiconducting Metal Oxide Nanowires. Sensors (Basel). 2020 Nov 27;20(23):6781. doi: 10.3390/s20236781. PMID: 33260973; PMCID: PMC7729516.
  3. Yan, Shen , et al. "Surface Morphology Improvement of Non-Polar a-Plane GaN Using a Low-Temperature GaN Insertion Layer." Chinese Physics Letters 37.3(2020):038102.
  4. Li, Yangfeng , et al. "Effect of H2 treatment in barrier on interface, optical and electrical properties of InGaN light emitting diodes." Superlattices and Microstructures 145(2020):106606.
  5. XINXIN, et al. "Hybrid nano-scale Au with ITO structure for a high-performance near-infrared silicon-based photodetector with ultralow dark current." Photonics Research v.8.11(2020):63-71.
  6. Wang, Sen , et al. "Fabrication, structural and optical properties of virtual GeSi template by Ge filling the porous Si prepared by EC etching." Japanese Journal of Applied Physics 59.5(2020).
  7. Han, Lili , et al. "Luminescence study in InGaAs/AlGaAs multi-quantum-well light emitting diode with p–n junction engineering." Journal of Applied Physics 127.8(2020):085706-.
  8. Yan, Shen , et al. "Surface Morphology Improvement of Non-Polar a-Plane GaN Using a Low-Temperature GaN Insertion Layer." Chinese Physics Letters 37.3(2020):038102.
  9. 赵明龙, et al. "Characteristics of AlGaN/GaN high electron mobility transistors on metallic substrate." 中国物理B：英文版 29.4(2020):4.
  10. 李炫璋, et al. "A method to extend wavelength into middle-wavelength infrared based on InAsSb/(Al)GaSb interband transition quantum well infrared photodetector." Chinese Physics B v.29.03(2020):547-551.
—— 2019 ——
  1. Huo, Wenxue , et al. "Photoluminescence characteristics of InGaP/GaAs dual-junction solar cells under current mismatch condition." Applied Physics Express 12.11(2019).
  2. Xu, RanDeng, ZhenYue, YinWang, SenLi, XinxinMa, ZiguangJiang, YangWang, LuDu, ChunhuaJia, HaiqiangWang, WenxinChen, Hong. "Fabrication of large-scale uniform submicron inverted pyramid pit arrays on silicon substrates by laser interference lithography." Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology 165(2019).
  3. Li, Yangfeng , et al. "Visualizing carrier transitions between localization states in a InGaN yellow–green light-emitting-diode structure." Journal of Applied Physics 126.9(2019):095705.
  4. Wang, Caiwei , et al. "Improved crystal quality of non-polar a-plane GaN epi-layers directly grown on optimized hole-array patterned r-sapphire substrates." CrystEngComm (2019).
  5. Yan, Shen , et al. "Improvement in the crystal quality of non-polar a -plane GaN directly grown on an SiO 2 stripe-patterned r -plane sapphire substrate." CrystEngComm 21.Suppl 2(2019).
  6. 鲁金蕾, et al. "Numerical and Experimental Study on the Device Geometry Dependence of Performance of Heterjunction Phototransistors." 中国物理快报：英文版 36.10(2019):4.
  7. Hu, Wei , et al. "The substantial dislocation reduction by preferentially passivating etched defect pits in GaN epitaxial growth." Appl. Phys. Express 12.3(2019).
  8. Liu, Jie , et al. "InAs/InGaAs/InAlAs interband quantum well infrared photodetector (IQWIP) with cut-off response wavelength at 1.93μm." Applied Physics Express (2019).
  9. 乐艮, et al. "Absorption Enhancement of Silicon Solar Cell in a Positive-Intrinsic-Negative Junction." Chinese Physics Letters v.36.05(2019):64-66.
  10. Die, Junhui , et al. "Reduction in crystalline quality anisotropy for non-polar a-plane GaN directly grown on titanium patterned sapphire substrate." Applied Physics Express 12.1(2019):015503 (5pp).
  11. Huo, Wenxue , et al. "Photoluminescence characteristics of InGaP/GaAs dual-junction solar cells under current mismatch condition." Applied Physics Express 12.11(2019).
  12. Li, Yangfeng , et al. "Characterization of periodicity fluctuations in InGaN/GaN MQWs by the kinematical simulation of X-ray diffraction." Appl. Phys. Express (2019).
—— 2018 ——
  1. Wang C, Jiang Y, Ma Z, et al. Rectifying behavior in the GaN/graded-AlxGa1-xN/GaN double heterojunction structure[J]. Journal of Physics D Applied Physics, 2018, 51(20).
  2. 乐艮, 雷宇, 迭俊珲, et al. Fabrication of 4-Inch Nano Patterned Wafer with High Uniformity by Laser Interference Lithography[J]. Chinese Physics Letters, 2018, 35(5):054207.
  3. Zhao B, Hu W, Tang X S, et al. Characteristic improvements of thin film AlGaInP red light emitting diodes on a metallic substrate[J]. 中国物理b, 2018, 27(4):047803.
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