Publication list (2013)

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2011

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2005

1. 戴隆贵, 禤铭东, 丁芃,等. 一种简单高效的制备硅纳米孔阵结构的方法*[J]. 物理学报, 2013, 62(15):315-320.

2. 钱卫宁, 宿世臣, 陈弘, et al. Effect of InxGal-xN "continuously graded" buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition[J]. 中国物理b:英文版, 2013, 22(10):401-405.

3. 卢平元, 马紫光, 宿世臣, et al. Influence of Si doping on the structural and optical properties of InGaN epilayers[J]. Chinese Physics B, 2013, 22(10):449-452.

4. Peiqiang X, Yang J, Ziguang M, et al. The Influence of Graded AlGaN Buffer Thickness for Crack-Free GaN on Si(111) Substrates by using MOCVD[J]. Chinese Physics Letters, 2013, 30(2):028101.

5. Zhen Deng, Yang Jiang, Ziguang Ma, et al. A novel wavelength-adjusting method in InGaN-based light-emitting diodes[J]. Scientific Reports, 2013, 3(51):3389.

6. Li H, Cui Y X, Wu K Y, et al. Strain relaxation and Sn segregation in GeSn epilayers under thermal treatment[J]. Applied Physics Letters, 2013, 102(25):221912.

7. 于英霞, 林兆军, 栾崇彪, et al. Electron mobility in the linear region of an AlGaN/AlN/GaN heterostructure field-effect transistor[J]. Chinese Physics B, 2013, 22(6):530-535.

8. Hudong C, Guiming L, Bing S, et al. A High Performance In0.7Ga0.3As MOSFET with an InP Barrier Layer for Radio-Frequency Application[J]. Chinese Physics Letters, 2013, 30(3):037303.

9. Zhou D, Weng Q, Wang W, et al. The photocurrent of resonant tunneling diode controlled by the charging effects of quantum dots[J]. Optical & Quantum Electronics, 2013, 45(7):687-692.