2022

Publication list (2019)

2021

2020

2019

2018

2013~

2005

1. Huo, Wenxue , et al. "Photoluminescence characteristics of InGaP/GaAs dual-junction solar cells under current mismatch condition." Applied Physics Express 12.11(2019).
2. Xu, RanDeng, ZhenYue, YinWang, SenLi, XinxinMa, ZiguangJiang, YangWang, LuDu, ChunhuaJia, HaiqiangWang, WenxinChen, Hong. "Fabrication of large-scale uniform submicron inverted pyramid pit arrays on silicon substrates by laser interference lithography." Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology 165(2019).
3. Li, Yangfeng , et al. "Visualizing carrier transitions between localization states in a InGaN yellow–green light-emitting-diode structure." Journal of Applied Physics 126.9(2019):095705.
4. Wang, Caiwei , et al. "Improved crystal quality of non-polar a-plane GaN epi-layers directly grown on optimized hole-array patterned r-sapphire substrates." CrystEngComm (2019).
5.  Yan, Shen , et al. "Improvement in the crystal quality of non-polar a -plane GaN directly grown on an SiO 2 stripe-patterned r -plane sapphire substrate." CrystEngComm 21.Suppl 2(2019).
6. 鲁金蕾, et al. "Numerical and Experimental Study on the Device Geometry Dependence of Performance of Heterjunction Phototransistors." 中国物理快报：英文版 36.10(2019):4.
7.  Hu, Wei , et al. "The substantial dislocation reduction by preferentially passivating etched defect pits in GaN epitaxial growth." Appl. Phys. Express 12.3(2019).
8.  Liu, Jie , et al. "InAs/InGaAs/InAlAs interband quantum well infrared photodetector (IQWIP) with cut-off response wavelength at 1.93μm." Applied Physics Express (2019).
9. 乐艮, et al. "Absorption Enhancement of Silicon Solar Cell in a Positive-Intrinsic-Negative Junction." Chinese Physics Letters v.36.05(2019):64-66.
10.  Die, Junhui , et al. "Reduction in crystalline quality anisotropy for non-polar a-plane GaN directly grown on titanium patterned sapphire substrate." Applied Physics Express 12.1(2019):015503 (5pp).
11. Huo, Wenxue , et al. "Photoluminescence characteristics of InGaP/GaAs dual-junction solar cells under current mismatch condition." Applied Physics Express 12.11(2019).
12. Li, Yangfeng , et al. "Characterization of periodicity fluctuations in InGaN/GaN MQWs by the kinematical simulation of X-ray diffraction." Appl. Phys. Express (2019).
13. Li, Yangfeng , et al. "Characterization of periodicity fluctuations in InGaN/GaN MQWs by the kinematical simulation of X-ray diffraction." Appl. Phys. Express (2019).