清洁能源实验室

新型化合物半导体材料与器件研究组 (E03)

2022

Publication list (2021)

2021

2020

2019

2018

2013~

2005

  1. Tang, Xiansheng , et al. "Stripping GaN/InGaN epitaxial films and fabricating vertical GaN-based light-emitting diodes." Vacuum 187.18(2021):110160.
  2. B, Yangfeng Li A , et al. "Epitaxy N-polar GaN on vicinal Sapphire substrate by MOCVD." Vacuum 189.
  3. Envelope, Wenqi Wang A B Person , et al. "Dark current investigation in individual planar In 0.53 Ga 0.47 As/InP detector and fine pixel-pitch array with spacing variations." Results in Optics 5(2021).
  4. C, Xiansheng Tang A B , et al. "Enhancement of light extraction efficiency of AlGaInP-based light emitting diodes by silicon oxide hemisphere array - ScienceDirect." Optics Communications 481.
  5. Tang, Xiansheng , et al. "Enhanced light extraction from AlGaInP-based red light-emitting diode with photonic crystal." Optics Express (2021).
  6. Han, Lili , et al. "Effect of Pt Interlayer on Low Resistivity Ohmic Contact to p-InP Layer and Its Optimization." 中国物理快报:英文版 (2021).
  7. Li, Xinxin , et al. "Sphere-shaped SiGe micro/nanostructures with tunable Ge composition and size formed by laser irradiation." Chinese Physics B 30.9(2021).
  8. Wang, Wenqi , et al. "Influence of Sb 2 soaking on strained InAs 0.8 Sb 0.2 /Al 0.2 Ga 0.8 Sb multiple quantum well interfaces." AIP Advances 11.7(2021):075004.
  9. Tang, Xiansheng , et al. "Origin of anomalous enhancement of the absorption coefficient in a PN junction." Chinese Physics B (2021).
  10. Chen Yue et al. “Enhanced absorption process in the thin active region of GaAs based p–i–n structure”. Chin. Phys. B Vol. 30, No. 9 (2021) 097803.
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