清洁能源实验室

新型化合物半导体材料与器件研究组 (E03)

2018

Publication list (2010)

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2005


  1. Wang X L, Wang X H, Jia H Q, et al. Recent progress in single chip white light-emitting diodes with the InGaN underlying layer[J]. Science China(Physics,Mechanics & Astronomy), 2010, 53(3):445-448.
  2. Ding G J, Guo L W, Xing Z G, et al. Characterization of different-Al-content AlGaN/GaN heterostructures on sapphire[J]. Science China(Physics,Mechanics & Astronomy), 2010, 53(1):49-53.

  3. Ding G J. Growth and character stics of AlGaN/GaN HEMT structures with AlN/GaN superlattices as barrier layers[J]. Acta Physica Sinica, 2010, 59(8):5724-5729.

  4. Wang L, Li M C, Wang W X, et al. Suppressing the multimodal size distribution of InAs/GaAs quantum dots through flattening the surface fluctuation[J]. Science China(Physics,Mechanics & Astronomy), 2010, 53(5):788-792.

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