2018

Publication list (2011)

2017

2016

2015

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2012

2011

2010

2008

2009

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2005

1. 何涛, 陈耀, 李辉,等. 利用MOCVD在r面蓝宝石上生长的α面GaN中两步AlN缓冲层的优化(英文)[J]. 发光学报, 2011, 32(4):363-367.

2. 李辉, 何涛, 戴隆贵,等. 气源MBE外延自组装GeSi量子点的光致荧光[J]. 发光学报, 2011, 32(8):789-792.

3. 陈耀, 王文新, 黎艳,等. 国产SiC衬底上利用AlN缓冲层生长高质量GaN外延薄膜[J]. 发光学报, 2011, 32(9):896-901.

4. 马紫光, 王文新, 王小丽,等. SiN_x插入层的生长位置对GaN外延薄膜性质的影响(英文)[J]. 发光学报, 2011, 32(10):1014-1019.

5. 王小丽, 王文新, 江洋,等. 具有超晶格应力调制结构的绿光InGaN/GaN多量子阱的发光特性[J]. 发光学报, 2011, 32(11):1152-1158.

6. Chen Y, Jiang Y, Peiqiang X U, et al. Stress Control in GaN Grown on 6H-SiC by Metalorganic Chemical Vapor Deposition[J]. Chinese Physics Letters, 2011, 28(4):048101.

7. Ma Z G, Xing Z G, Wang X L, et al. The impact of nanoporous SiN x, interlayer growth position on high-quality GaN epitaxial films[J]. Science Bulletin, 2011, 56(25):2739.

8. Jiang Y, Jia H, Wang W, et al. Recent progress of GaN growth on maskless chemical-etched grooved sapphire substrate[J]. Energy & Environmental Science, 2011, 4(8):2625-2629.

9. Li H, He T, Dai L G, et al. Temperature dependence of photoluminescence from self-organized Ge quantum dots with large size and low density[J]. Science China(Physics,Mechanics & Astronomy), 2011, 54(2):245-248.

10. 吕元杰, 林兆军, 张宇, et al. Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts[J]. Chinese Physics B, 2011, 20(4):430-434.

11. 吕元杰, 林兆军, 张宇, et al. Influence of thermal stress on the relative permittivity of the AlGaN barrier layer in an AlGaN/GaN heterostructure Schottky contacts[J]. Chinese Physics B, 2011, 20(9):350-354.

12. Lv Y, Lin Z, Meng L, et al. Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics[J]. Applied Physics Letters, 2011, 99(12):053702.

13. Lv Y, Lin Z, Corrigan T D, et al. Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics[J]. Journal of Applied Physics, 2011, 109(7):781.