2018

Publication list (2012)

2017

2016

2015

2014

2013

2012

2011

2010

2008

2009

2007

2006

2005

1. Chen Y, Xu P Q, Ma Z G, et al. Improvement of Breakdown Characteristics of a GaN HEMT with AlGaN Buffer Layer[J]. Journal of Electronic Materials, 2012, 41(3):471-475.

2. Tian H, Wang L, Shi Z, et al. Effect of self-assembled InAs islands on the interfacial roughness of optical-switched resonant tunneling diode[J]. Nanoscale Research Letters, 2012, 7(1):128.

3. Xu P. Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD[J]. Nanoscale Research Letters, 2012, 7(1):141.

4. Luan C, Lin Z, Lv Y, et al. Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors[J]. Applied Physics Letters, 2012, 101(11):053702.

5. 曹芝芳, 林兆军, 吕元杰, et al. Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes[J]. Chinese Physics B, 2012, 21(1):414-418.

6. Dun S, Jiang Y, Li J, et al. Micro‐Raman spectroscopy observation of field‐induced strain relaxation in AlGaN/GaN heterojunction field‐effect transistors[J]. Physica Status Solidi, 2012, 209(6):1174-1178.